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 Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER General Description
The AZ386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of an external resistor and capacitor between pin 1 and pin 8 will increase the gain to any value from 20 to 200. The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is only 24mW when operating from a 5V supply, making the AZ386 ideal for battery operation. This IC is available in SOIC-8 and DIP-8 packages.
AZ386
Features
* * * * * * * Wide Supply Voltage Range: 4V to 16V Low Quiescent Current Drain: 6mA Voltage Gains from 20 to 200 Battery Operation Minimum External Parts Low Power Dissipation Low Distortion
Applications
* * * * * * * * * AM-FM Radio Amplifier Cordless Phone TV Sound Systems Portable Tape Player Amplifier Intercoms Line Drivers Ultrasonic Drivers Small Servo Drivers Power Converters
SOIC-8
DIP-8
Figure 1. Package Types of AZ386
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
1
Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Pin Configuration
M Package/P Package (SOIC-8/DIP-8)
GAIN INPUT INPUT + GND 1 2 3 4 8 7 6 5 GAIN BYPASS VCC VOUT
AZ386
Top View Figure 2. Pin Configuration of AZ386
Functional Block Diagram
GAIN 8 GAIN 1 6 7 BYPASS 15K 5 150 1.35K 15K VOUT 15K VCC
2 INPUT -
50K 50K 4 3 INPUT + GND
Figure 3. Functional Block Diagram of AZ386
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
2
Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Ordering Information AZ386
AZ386 Circuit Type
E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube
Package M: SOIC-8 P: DIP-8
Package
Temperature Range 0 to 70oC 0 to 70 C
o
Part Number Tin Lead AZ386M AZ386MTR AZ386P Lead Free AZ386M-E1 AZ386MTR-E1 AZ386P-E1
Marking ID Tin Lead 386M 386M AZ386P Lead Free 386M-E1 386M-E1 AZ386P-E1
Packing Type Tube Tape & Reel Tube
SOIC-8 DIP-8
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
3
Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Absolute Maximum Ratings (Note 1)
Parameter Power Supply Voltage Package Dissipation (Note 2) Input Voltage Junction Temperature Storage Temperature Range Symbol VCC PD VIN TJ TSTG AZ386P AZ386M -0.4 to 0.4 150 -55 to 150 DIP-8 Soldering (10 sec.) SOIC-8 (15 sec.) Thermal Resistance JA DIP-8 SOIC-8 260 215 107 172
oC/W
AZ386
Value 18 1.25 0.73
Unit V W W V
o o
C
C C
Soldering Information
o
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: For operation in ambient temperatures (TA) above 25oC, the device must be derated based on a 150oC maximum junction temperature and 1) a thermal resistance of 107oC/W junction to ambient for the Dual-in-Line package and 2) a thermal resistance of 172oC/W for the small outline package.
Recommended Operating Conditions
Parameter Operating Temperature Range Min 0 Max 70 Unit
o
C
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4
Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Electrical Characteristics (Note 3)
Operating Conditions: TA=25oC unless otherwise specified.
Parameter Supply Voltage Quiescent Current Symbol VCC IQ VCC=6V, VIN=0 VCC=6V, RL=8, THD=10% Output Power POUT VCC=9V, RL=8, THD=10% VCC=16V, RL=32, THD=10% Voltage Gain Bandwidth Total Harmonic Distortion Power Supply Rejection Ratio Input Resistance Input Bias Current GV BW THD PSRR RIN IBIAS VCC=6V, Pins 2 and 3 open VCC=6V, f=1KHz 10F from Pin 1 to 8 VCC=6V, Pins 1 and 8 open VCC=6V, RL=8, POUT=125mW f=1KHz, Pins 1 and 8 open VCC=6V, f=1KHz, CBYPASS=10F, Pins 1 and 8 open, Referred to Output Test Conditions Min Typ Max Unit
AZ386
4 6 250 500 700 300 800 1000 26 45 500 0.27 45 70 10
16 8
V mA mW mW mW dB dB KHz % dB K nA
Note 3: All voltages are measured with respect to the ground pin, unless otherwise specified.
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Typical Performance Characteristics
8
16 14 12 10 8 6 4 2 0
AZ386
7
6
5
AZ386
4
Output Voltage (V) (peak to peak)
Supply Current (mA)
3
2
AZ386 RL=4 AZ386 RL=8 AZ386 RL=16 AZ386 RL=32
4 5 6 7 8
1 4 6 8 10 12 14 16 18
Supply Voltage (V)
Supply Voltage (V)
9
10
11
12
13
14
15
16
Figure 4. Quiescent Supply Current vs. Supply Voltage
60
Figure 5. Peak-to-Peak Output Voltage Swing vs. Supply Voltage
1.2
50
1.0
AZ386 VCC=6V RL=8 POUT=125mW C1,8=0
Voltage Gain (dB)
40
0.8
THD (%)
AZ386 C1,8=0 AZ386 C1,8=10u
30
0.6
20
0.4
10
0.2
0 100
1k
10k
100k
1M
0.0 10
100
Frequency (Hz)
Frequency (Hz)
1k
10k
Figure 6. Voltage Gain vs. Frequency
10 9
Figure 7. Distortion vs. Frequency
2.0 1.8
Device Dissipation (W)
8 7
AZ386 VCC=6V RL=8 f=1KHz
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0
AZ386 VCC=12V AZ386 VCC=9V AZ386 VCC=6V RL=4
THD (%)
6 5 4 3 2 1 0 1 10
Power Out (mW)
100
1,000
0.1
0.2
0.3
0.4
0.5
Output Power (W)
Figure 8. Distortion vs. Output Power
Figure 9. Device Dissipation vs. Output Power (4 Load)
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6
Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Typical Performance Characteristics (Continued)
2.0 1.8
AZ386
Device Dissipation (W)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0
Device Dissipation (W)
AZ386 VCC=16V AZ386 VCC=12V AZ386 VCC=9V AZ386 VCC=6V RL=8
1.0
0.8
0.6
0.4
0.2
AZ386 VCC=16V AZ386 VCC=12V AZ386 VCC=9V AZ386 VCC=6V RL=16
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 0.0
Output Power (W)
Output Power (W)
Figure 10. Device Dissipation vs. Output Power (8 Load)
Figure 11. Device Dissipation vs. Output Power (16 Load)
Typical Applications
VCC
VCC
10F
+
6 2
1 8 250F
6 2VIN 10K 3 + 4 AZ386 0.05F 7 10
AZ386
1 8
250F
+
5
VIN 10K 3 + 4
+
5 0.05F 7 10
BYPASS
Figure 12. Amplifier With Gain=20
Figure 13. Amplifier With Gain=200
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
7
Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Typical Applications (Continued) AZ386
VCC 1.2K 6 2 VIN 10K 3 + 4 BYPASS AZ386 7 0.05F 1
8
VCC
390
+
+
10F
ELDEMA CF-S-2158
2-
6
1
10F
8
50F
250F
+
5
3V - 15mA 3 +
AZ386 0.01F 7 BYPASS 47K
+
5 0.05F 10
VO
RL
10
4.7K 0.01F
Figure 14. Amplifier With Gain=50
Figure 15. Low Distortion Power Wienbridge Oscillator
VCC
2
VCC 6 30K 1 8 AZ386 5 3 + 4 7 RL 50F VO
6 2 AZ386 3 + 4 8
-
10K
1
0.033F
0.1F
+
250F V O
VIN 10K
+
5 0.05F 7 10 RL
1K
10K f = 1KHz
Figure 16. Amplifier With Bass Boost
Figure 17. Square Wave Oscillator
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
8
Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Mechanical Dimensions SOIC-8 Unit: mm(inch) AZ386
4.700(0.185) 5.100(0.201) 7
1.350(0.053) 1.750(0.069)
0.320(0.013)
8
7
8
0.675(0.027) 0.725(0.029)
D
5.800(0.228) 6.200(0.244)
D 20:1
1.270(0.050) TYP
0.100(0.004) 0.300(0.012) R0.150(0.006)
0.800(0.031)
0.200(0.008)
1.000(0.039) 3.800(0.150) 4.000(0.157)
0 8
0.330(0.013) 0.510(0.020)
0.190(0.007) 0.250(0.010) 0.900(0.035)
1 5
R0.150(0.006)
0.450(0.017) 0.800(0.031)
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
9
Data Sheet LOW VOLTAGE AUDIO POWER AMPLIFIER Mechanical Dimensions (Continued) DIP-8 Unit: mm(inch) AZ386
0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP
6
6
5
3.710(0.146) 4.310(0.170) 4
3.200(0.126) 3.600(0.142)
4
3.000(0.118) 3.600(0.142)
0.510(0.020)MIN
0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 2.540(0.100) TYP 0.130(0.005)MIN
0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370)
R0.750(0.030) 3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370)
6.200(0.244) 6.600(0.260)
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
10
http://www.bcdsemi.com
IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.
MAIN SITE BCD Semiconductor Manufacturing Limited
- Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
- IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951, Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A


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